2SC5137 silicon npn epitaxial ade-208-224a (z) 2nd. edition mar. 2001 application vhf / uhf wide band amplifier features high gain bandwidth product f t = 10 ghz typ high gain, low noise figure pg = 16.5 db typ, nf = 1.5 db typ at f = 900 mhz outline 1 2 3 1. emitter 2. base 3. collector smpak note: marking is ?a. attention: this device is very sensitive to electro static discharge. it is recommended to adopt appropriate cautions when handling this transistor.
2SC5137 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 8v emitter to base voltage v ebo 1.5 v collector current i c 20 ma collector power dissipation p c 80 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector cutoff current i cbo 10 m av cb = 15 v, i e = 0 i ceo 1 mav ce = 8 v, r be = emitter cutoff current i ebo 10 m av eb = 1.5 v, i c = 0 dc current transfer ratio h fe 50 120 250 v ce = 5 v, i c = 10 ma collector output capacitance cob 0.45 0.8 pf v cb = 5 v, i e = 0, f = 1 mhz gain bandwidth product f t 7 10 ghz v ce = 5 v, i c = 10 ma power gain pg 12 16.5 db v ce = 5 v, i c = 10 ma, f = 900 mhz noise figure nf 1.5 2.5 db v ce = 5 v, i c = 5 ma, f = 900 mhz
2SC5137 3 160 120 80 40 0 ambient temperature ta ( c) collector power dissipation pc (mw) 50 100 150 200 maximum collector dissipation curve 200 160 120 80 40 collector current i (ma) c dc current transfer ratio h fe 0 dc current transfer ratio vs. collector current 0.1 1 10 50 v = 5 v pulse test ce 20 16 12 8 4 12 51020 collector current i (ma) 50 c 0 v = 5v ce gain bandwidth product vs. collector current v = 1v ce gain bandwidth product f (ghz) t collector output capacitance cob (pf) collector to base voltage v (v) cb 0.1 0.2 0.5 1 2 5 10 20 collector output capacitance vs. collector to base voltage 1.0 0.8 0.6 0.4 0.2 0 i = 0 f = 1 mhz e
2SC5137 4 20 16 12 8 4 collector current i (ma) 50 power gain pg (db) c 0 power gain vs. collector current 0.1 0.2 0.5 1 2 5 10 20 v = 5v ce v = 1v ce f = 900 mhz 10 8 6 4 2 collector current i (ma) 50 noise figure nf (db) c 0 noise figure vs. collector current 0.1 0.2 0.5 1 2 5 10 20 v = 5v ce v = 1v ce f = 900 mhz
2SC5137 5 condition: v = 5 v , zo = 50 200 to 2000 mhz (200 mhz step) ce (i = 5 ma) (i = 10 ma) c c w s11 parameter vs. frequency 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 2 3 4 5 1.5 10 1.0 scale: 4 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 condition: v = 5 v , zo = 50 200 to 2000 mhz (200 mhz step) ce (i = 5 ma) (i = 10 ma) c c w s21 parameter vs. frequency scale: 0.04 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 condition: v = 5 v , zo = 50 200 to 2000 mhz (200 mhz step) ce (i = 5 ma) (i = 10 ma) c c w s12 parameter vs. frequency condition: v = 5 v , zo = 50 200 to 2000 mhz (200 mhz step) ce (i = 5 ma) (i = 10 ma) c c w 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 2 3 4 5 1.5 10 s22 parameter vs. frequency 1.0
2SC5137 6 condition: v = 1 v , zo = 50 200 to 2000 mhz (200 mhz step) ce (i = 5 ma) (i = 10 ma) c c w 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 2 3 4 5 1.5 10 s11 parameter vs. frequency 1.0 scale: 4 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 condition: v = 1 v , zo = 50 200 to 2000 mhz (200 mhz step) ce (i = 5 ma) (i = 10 ma) c c w s21 parameter vs. frequency scale: 0.04 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 condition: v = 1 v , zo = 50 200 to 2000 mhz (200 mhz step) ce (i = 5 ma) (i = 10 ma) c c w s12 parameter vs. frequency condition: v = 1 v , zo = 50 200 to 2000 mhz (200 mhz step) ce (i = 5 ma) (i = 10 ma) c c w s22 parameter vs. frequency 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 2 3 4 5 1.5 10 1.0
2SC5137 7 package dimensions 1.6 0.2 0.3 1.6 0.2 0.4 0.5 0.5 1.0 0.1 0.15 0 ?0.1 0.55 0.7 0.1 +0.1 ?.05 +0.1 ?.05 0.2 +0.1 ?.05 +0.1 ?.05 0.2 1 2 3 0.8 0.1 0.4 hitachi code jedec eiaj mass (reference value) smpak conforms 0.003 g as of january, 2001 unit: mm
2SC5137 8 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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